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STP62NS04Z
N-channel clamped 12.5m - 62A - TO-220 Fully protected MESH OVERLAYTM Power MOSFET
General features
Type STP62NS04Z

VDSS (@Tjmax) Clamped
RDS(on) <0.015
ID 62A
100% avalanche tested Low capacitance and gate charge 175 C maximum junction temperature
TO-220
1 2
3
Description
This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STP62NS04Z Marking P62NS04Z Package TO-220 Packaging Tube
October 2006
Rev 5
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Contents
STP62NS04Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP62NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDG IGS IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain gate current (continuous) Gate sourcecurrent (continuous) Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value Clamped Clamped 62 37.5 50 50 248 110 0.74 8 500 8 -55 to 175 A W W/C V/ns mJ V C Unit V V A A
PTOT
(2) (3)
dv/dt EAS
Peak diode recovery voltage slope Single Pulse Avalanche Energy ESD (HBM - C = 100pF, R = 1.5 k) Operating junction temperature Storage temperature
VESD TJ Tstg
1. Pulse width limited by safe operating area 2. ISD 40A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting TJ = 25 oC, ID = 20A, VDD = 20V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.36 62.5 300 Unit C/W C/W C
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Electrical characteristics
STP62NS04Z
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate-Source Breakdown Voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 16V VGS = 10V IGS = 100 A VDS = VGS, ID = 250A VGS = 10V, ID = 30A 18 2 12.5 4 15 Min. 33 10 10 Typ. Max. Unit V A A V V m
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 30A VDS =25V, f = 1 MHz, VGS = 0 Min. Typ. 20 1330 420 135 34 10 11.5 47 Max. Unit S pF pF pF nC nC nC
VDD = 20V, ID = 40A VGS =10V
1. Pulsed: pulse duration=300s, duty cycle 1.5%
Table 5.
Symbol td(on) tr td(off) tf tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD= 20V, ID= 20A, RG=4.7, VGS = 10V Figure 13 on page 8 Vclamp = 30V, ID = 40A RG = 4.7, VGS = 10V Figure 13 on page 8 Min. Typ. 13 104 41 42 30 54 90 Max. Unit ns ns ns ns ns ns ns
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STP62NS04Z
Electrical characteristics
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 62A, VGS = 0 ISD = 40A, di/dt = 100A/s, VDD = 20V, TJ = 150C Figure 15 on page 8 45 65 2.9 Test conditions Min Typ. Max 62 248 1.5 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP62NS04Z
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP62NS04Z Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
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Test circuit
STP62NS04Z
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
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STP62NS04Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP62NS04Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP62NS04Z
Revision history
5
Revision history
Table 7.
Date 21-Jun-2004 22-Aug-2005 21-Jan-2006 02-Oct-2006
Revision history
Revision 2 3 4 5 Preliminary datasheet Complete document with curves New ECOPAK label New template, no content change Changes
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STP62NS04Z
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